Graphene film growth on polycrystalline metals.
Identifieur interne : 000674 ( Main/Exploration ); précédent : 000673; suivant : 000675Graphene film growth on polycrystalline metals.
Auteurs : RBID : pubmed:22891883Abstract
Graphene, a true wonder material, is the newest member of the nanocarbon family. The continuous network of hexagonally arranged carbon atoms gives rise to exceptional electronic, mechanical, and thermal properties, which could result in the application of graphene in next generation electronic components, energy-storage materials such as capacitors and batteries, polymer nanocomposites, transparent conducting electrodes, and mechanical resonators. With one particularly attractive application, optically transparent conducting electrodes or films, graphene has the potential to rival indium tin oxide (ITO) and become a material for producing next generation displays, solar cells, and sensors. Typically, graphene has been produced from graphite using a variety of methods, but these techniques are not suitable for growing large-area graphene films. Therefore researchers have focused much effort on the development of methodology to grow graphene films across extended surfaces. This Account describes current progress in the formation and control of graphene films on polycrystalline metal surfaces. Researchers can grow graphene films on a variety of polycrystalline metal substrates using a range of experimental conditions. In particular, group 8 metals (iron and ruthenium), group 9 metals (cobalt, rhodium, and iridium), group 10 metals (nickel and platinum), and group 11 metals (copper and gold) can support the growth of these films. Stainless steel and other commercial copper-nickel alloys can also serve as substrates for graphene film growth. The use of copper and nickel currently predominates, and these metals produce large-area films that have been efficiently transferred and tested in many electronic devices. Researchers have grown graphene sheets more than 30 in. wide and transferred them onto display plastic ready for incorporation into next generation displays. The further development of graphene films in commercial applications will require high-quality, reproducible growth at ambient pressure and low temperature from cheap, readily available carbon sources. The growth of graphene on metal surfaces has drawbacks: researchers must transfer the graphene from the metal substrate or remove the metal by etching. Further research is needed to overcome these transfer and removal challenges.
DOI: 10.1021/ar3001266
PubMed: 22891883
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The continuous network of hexagonally arranged carbon atoms gives rise to exceptional electronic, mechanical, and thermal properties, which could result in the application of graphene in next generation electronic components, energy-storage materials such as capacitors and batteries, polymer nanocomposites, transparent conducting electrodes, and mechanical resonators. With one particularly attractive application, optically transparent conducting electrodes or films, graphene has the potential to rival indium tin oxide (ITO) and become a material for producing next generation displays, solar cells, and sensors. Typically, graphene has been produced from graphite using a variety of methods, but these techniques are not suitable for growing large-area graphene films. Therefore researchers have focused much effort on the development of methodology to grow graphene films across extended surfaces. This Account describes current progress in the formation and control of graphene films on polycrystalline metal surfaces. Researchers can grow graphene films on a variety of polycrystalline metal substrates using a range of experimental conditions. In particular, group 8 metals (iron and ruthenium), group 9 metals (cobalt, rhodium, and iridium), group 10 metals (nickel and platinum), and group 11 metals (copper and gold) can support the growth of these films. Stainless steel and other commercial copper-nickel alloys can also serve as substrates for graphene film growth. The use of copper and nickel currently predominates, and these metals produce large-area films that have been efficiently transferred and tested in many electronic devices. Researchers have grown graphene sheets more than 30 in. wide and transferred them onto display plastic ready for incorporation into next generation displays. The further development of graphene films in commercial applications will require high-quality, reproducible growth at ambient pressure and low temperature from cheap, readily available carbon sources. The growth of graphene on metal surfaces has drawbacks: researchers must transfer the graphene from the metal substrate or remove the metal by etching. Further research is needed to overcome these transfer and removal challenges.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">22891883</PMID><DateCreated><Year>2013</Year><Month>01</Month><Day>15</Day></DateCreated><DateCompleted><Year>2014</Year><Month>01</Month><Day>13</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1520-4898</ISSN><JournalIssue CitedMedium="Internet"><Volume>46</Volume><Issue>1</Issue><PubDate><Year>2013</Year><Month>Jan</Month><Day>15</Day></PubDate></JournalIssue><Title>Accounts of chemical research</Title><ISOAbbreviation>Acc. Chem. Res.</ISOAbbreviation></Journal><ArticleTitle>Graphene film growth on polycrystalline metals.</ArticleTitle><Pagination><MedlinePgn>23-30</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/ar3001266</ELocationID><Abstract><AbstractText>Graphene, a true wonder material, is the newest member of the nanocarbon family. The continuous network of hexagonally arranged carbon atoms gives rise to exceptional electronic, mechanical, and thermal properties, which could result in the application of graphene in next generation electronic components, energy-storage materials such as capacitors and batteries, polymer nanocomposites, transparent conducting electrodes, and mechanical resonators. With one particularly attractive application, optically transparent conducting electrodes or films, graphene has the potential to rival indium tin oxide (ITO) and become a material for producing next generation displays, solar cells, and sensors. Typically, graphene has been produced from graphite using a variety of methods, but these techniques are not suitable for growing large-area graphene films. Therefore researchers have focused much effort on the development of methodology to grow graphene films across extended surfaces. This Account describes current progress in the formation and control of graphene films on polycrystalline metal surfaces. Researchers can grow graphene films on a variety of polycrystalline metal substrates using a range of experimental conditions. In particular, group 8 metals (iron and ruthenium), group 9 metals (cobalt, rhodium, and iridium), group 10 metals (nickel and platinum), and group 11 metals (copper and gold) can support the growth of these films. Stainless steel and other commercial copper-nickel alloys can also serve as substrates for graphene film growth. The use of copper and nickel currently predominates, and these metals produce large-area films that have been efficiently transferred and tested in many electronic devices. Researchers have grown graphene sheets more than 30 in. wide and transferred them onto display plastic ready for incorporation into next generation displays. The further development of graphene films in commercial applications will require high-quality, reproducible growth at ambient pressure and low temperature from cheap, readily available carbon sources. The growth of graphene on metal surfaces has drawbacks: researchers must transfer the graphene from the metal substrate or remove the metal by etching. Further research is needed to overcome these transfer and removal challenges.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Edwards</LastName><ForeName>Rebecca S</ForeName><Initials>RS</Initials><Affiliation>Department of Chemistry, Durham University, UK.</Affiliation></Author><Author ValidYN="Y"><LastName>Coleman</LastName><ForeName>Karl S</ForeName><Initials>KS</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2012</Year><Month>08</Month><Day>15</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Acc Chem Res</MedlineTA><NlmUniqueID>0157313</NlmUniqueID><ISSNLinking>0001-4842</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2012</Year><Month>8</Month><Day>15</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>8</Month><Day>16</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>8</Month><Day>16</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>8</Month><Day>16</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/ar3001266</ArticleId><ArticleId IdType="pubmed">22891883</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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